United States Patent | 5,209,916 |
Gruen | May 11, 1993 |
Inventors: | Gruen; Dieter M. (1324 59th St., Downers Grove, IL 60515). |
Appl. No.: | 797,590 |
Filed: | Nov. 25, 1991 |
Intl. Cl.: | C01B 31/06; |
U.S. Cl.: | 423/446.; 156/DIG.68; |
Field of Search: | 37;38;249;460 |
4,629,631 | Dec., 1986 | Dearnaley | 427/ 38 |
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A method of forming synthetic diamond on a substrate is disclosed. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond thickness on the substrate.