| United States Patent | 5,370,855 |
| Gruen | Dec. 6, 1994 |
| Inventors: | Gruen; Dieter M. (1324 59th St., Downers Grove, IL 60515). |
| Appl. No.: | 035,419 |
| Filed: | Mar. 23, 1993 |
| Intl. Cl.: | C01B 31/06; |
| U.S. Cl.: | 423/446.; 204/157.47; |
| Field of Search: | 37;38;249;523 |
| 4,559,901 | Dec., 1985 | Morimoto et al. | 427/523 |
| 4,629,631 | Dec., 1986 | Dearnaley | |
| 4,634,600 | Jan., 1987 | Shimizu et al. | 427/523 |
| 5,132,105 | Jul., 1992 | Remo | 423/446 |
| 5,209,916 | May, 1993 | Gruen | 423/446 |
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A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.