| United States Patent | 5,454,880 |
| Sariciftci, et. al. | Oct. 3, 1995 |
| Inventors: | Sariciftci; N. S. (Santa Barbara, CA); Heeger; Alan J. (Santa Barbara, CA). |
| Assignee: | Regents of the University of California (Oakland, CA). |
| Appl. No.: | 180,909 |
| Filed: | Jan. 12, 1994 |
| Continuation of (including streamline cont.) Ser. No.930,161, Aug. 17, 1992, Pat. No. 5,331,183. |
| Intl. Cl.: | H01L 31/06; H01L 31/0256; H01L 31/0392 |
| U.S. Cl.: | 136/263; 257/ 40; 257/184; 257/461 |
| Field of Search: | 136/263; 257/40, 184, 461 |
| 5,009,958 | Apr., 1991 | Yamashita et al. | 428/411.1 |
| 5,171,373 | Dec., 1992 | Hebard et al. | 136/252 |
| 5,185,208 | Feb., 1993 | Yamashita et al. | 428/411.1 |
| 60-149177 | Aug., 1985 | JP | 136/263 |
H. Koezuka et al, J. Appl. Phys., vol. 58, Aug. 1985, pp. 1279-1284.
Sze, M. S., Physics of Semiconductor Laser Devices, (1981) Wiley-Interscience, New York, Chapter 13, "Photodetectors" pp. 743-789.
Sze, M. S. Physics of Semiconductor Laser Devices, (1981) Wiley-Interscience, New York, Chapter 14, "Solar Cells" pp. 790-838; and.
Fox; M. A., et al., Editors, Photoinduced Electron Transfer, (1988) Elsevier Science Publishers, Amsterdam, Part A, "Conceptual Basis" pp. 1-409; A copy of the title page, preface, and table of contents are enclosed herewith.
Fox, M. A., et al., Editors, Photoinduced Electron Transfer, (1988) Elsevier Science Publishers, Amsterdam, Part D, "Photoinduced Electron Transfer Reactions: Inorganic Substrates and Applications" pp. 1-652; A copy of the title page, preface, and table of contents are enclosed herewith.
Kamat, P., "Photoinduced charge transfer between fullerenes (C60 and C70) and semiconductor ZnO colloids" J. Am. Chem. Soc. (1991) 113:9705-9707.
Wang, Y., "Photoconductivity of fullerene-doped polymers" Nature (1992) 356:585-587.
Arbogast, J. et al., "Photophysical properties of C60" J. Phys. Chem. (1991) 95:11-12.
This invention relates generally to the fabrication of heterojunction diodes from semiconducting (conjugated) polymers and acceptors such as, for example, fullerenes, particularly Buckminsterfullerenes, C(60), and more particularly to the use of such heterojunction structures as photodiodes and as photovoltaic cells.
This invention was made in part with Government support under contract number N-00014-91-J-1235 awarded by the Office of Naval Research. The Government has certain rights in this invention.